| 摘要 |
PURPOSE:To obtain high resolution, high sensitivity and low dark currents by preventing the injection of holes by using high-resistance amorphous hydride silicon having the large composition of hydrogen and wide forbidden band width, forming a silicon carbide layer and obstructing the injection of electrons. CONSTITUTION:A photoconductor consists of two layers of amorphous hydride silicon layers 2 (a first layer) and 3 (a second layer) having different hydrogen contents and resistivity of 10<10>OMEGAcm or more shaped onto a substrate 1 and a silicon carbide layer 4. The amorphous hydride silicon layer 2 (the first layer) having more hydrogen content in two layers functions as an injection stopping layer for holes, and the silicon carbide layer 4 serves as an injection stopping layer for electrons. Accordingly, the effects of high resolution, high sensitivity and low dark currents is displayed. |
