| 摘要 |
PURPOSE:To form a uniform film on the surface of each wafer by supporting semiconductor wafers on the confronting sides of graphite electrode plates placed parallel to each other and by forming projection in regions of the electrode plates around the wafers. CONSTITUTION:Silicon wafers 3 are supported on the confronting sides of graphite electrode plates 1 placed parallel to each other through wafer receivers 4. Projections 6 of a prescribed height (b) are formed in regions of the electrode plates 1 around the wafers 3 at a prescribed interval (a). Processing is facilitated by making the height of the wafer receivers 4 equal to the height (b) of the projections 6. Reduction in the thickness of a deposited film on the peripheral part of each of the wafers 3 is prevented, so a film of a uniform thickness can be formed on each of the wafers 3.
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