| 摘要 |
PURPOSE:To obtain the title device having Al series electrode wirings without Si suction and without the increase in ohmic contact resistance, by a method wherein an insulation film having electrode contact windows is formed over an Si semiconductor substrate; next, at least three-element alloy film made of Al-Si-high melting point metal is formed and converted into a high melting point metallic silicide-Al alloy film by application of heat treatment. CONSTITUTION:An insulation film, having electrode contact windows, e.g. phosphor silicate glass film 2 is formed over an Si semiconductor substrate 1, and next an Al-Si-Ti film 4 which is a kind of at least three-element alloy film made of Al-Si-high melting point metal is formed and converted into a high melting point metallic silicide-Al alloy film 4' by application of heat treatment. This process produces a high melting point metallic silicide-Al film extremely stable in a thermal manner between a partial surface of the substrate 1 exposed in an electrode contact window and an electrode wiring. |
