| 摘要 |
PURPOSE:To position source and gate regions and a gate region to be interposed therebetween in a predetermined positional relation (self alignment) and to set an offset precisely and uniformly, by utilizing first and second mask layers in combination. CONSTITUTION:A semiconductor substrate S is provided thereon with a first mask layer 3 having a predetermined width W corresponding to the length of a gate. A second mask layer 4 is further provided on the layer 3. The first mask layer 3 has, in its sections adjacent to the opposing side faces 3a1 and 3a2, a thickness d1 sufficiently larger than a thickness d2 in the other sections, and a width Ws in these thicker sections 4a is determined corresponding to an interval (offset) between gate and source regions and between gate and drain regions. The interval between the source and drain regions 5 and 6 is determined corresponding to the sum of the width Ws of the thicker section 4a and the width W. The second mask layer 4 is etched to expose the first mask layer 3, and a window 4W is opened in the second mask layer 4. A gate region 8 is provided while forming a gate junction J. The offset is set to be a predetermined narrow interval Wo.
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