| 摘要 |
PURPOSE:To provide high output current and to clear the pattern detecting signal image, by arraying fluorescent material on an amorphous silicon semiconductor and by defining V-shaped grooves between respective elements on the fluorescent material face. CONSTITUTION:On the surface of a substrate 11 of material such as glass or transparent film which can transmit visible rays, fluorescent material 12 such as zinc sulfide doped with nickel is arrayed. On the back face of the substrate 11, a thin transparent conductive film 13 such as ITO, SnO2 is arrayed. Using a plasma decomposing method, a P-type amorphous silicon carbide semiconductor film 14, i-type amorphous silicon semiconductor film 15 and N-type amorphous silicon semiconductor film or N-type minute-crystalline silicon semiconductor film 16 are formed thereon in turn and moreover a number of small area back face electrodes 17 consisting of thin film electrodes are formed with aluminium evaporating, etc., to constitute a multi-element photo electromotive sensor which has V-shaped or nearly V-shaped grooves 18 between respective elements on the surface of the fluorescent material 12. |
