发明名称 |
Power semiconductor component |
摘要 |
In a power semiconductor component having at least one p-n junction (6) and driven-in recombination centres for establishing the carrier lifetime, getter layers (10) are provided outside the active region (A) determined by the main electrodes (1, 3). As a result, the reverse current density in the outer region is limited at least to the value of the active region. <IMAGE>
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申请公布号 |
CH657478(A5) |
申请公布日期 |
1986.08.29 |
申请号 |
CH19820004901 |
申请日期 |
1982.08.16 |
申请人 |
BBC AKTIENGESELLSCHAFT BROWN, BOVERI & CIE. |
发明人 |
JAECKLIN, ANDRE, DR. |
分类号 |
H01L21/265;H01L21/304;H01L21/322;H01L29/167;H01L29/34;H01L29/36;(IPC1-7):H01L29/06;H01L21/302 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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