发明名称 FORMATION OF DEPOSITED FILM
摘要 PURPOSE:To attain enlargement, improvement of productivity and mass production of the title films by a method wherein an active compound containing silicon and halogen as well as another active compound produced from an oxygen contained filming compound are separately fed to a filming space to form the title films on a substrate by means of irradiating them with photoenergy. CONSTITUTION:An active compound A produced by decomposing a silicon and halogen contained compound as well as another active compound B produced from an oxygen filming compound chemically reacting to the former are separately fed to a filming space to form the title films on a substrate by means of irradiating them with photoenergy. The life of applicable active compound A is recommended to exceed 10 seconds in terms of productivity and easy handling while., e.g, SiF4 or the like may be recommended for the applicable silicon and halogen contained compound. Likewise a compound comprising single substance of oxygen such as O2, O3 etc. as well as another compound comprising oxygen and one or exceeding two kinds of atoms other than oxygen may be recommended for the oxygen contained compound. Finally the preferable weight ratio of active compounds B and A may be 8:2-4:6.
申请公布号 JPS61193432(A) 申请公布日期 1986.08.27
申请号 JP19850033273 申请日期 1985.02.21
申请人 CANON INC 发明人 ISHIHARA SHUNICHI;ONO SHIGERU;KANAI MASAHIRO;ODA TOSHIMICHI;SHIMIZU ISAMU
分类号 C23C16/30;G03G5/08;H01L21/205;H01L31/04 主分类号 C23C16/30
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