| 摘要 |
PURPOSE:To prevent precipitation of Si to Al wiring by a method wherein concerning an electrode wiring whose laminated structure is constituted of polysilicon, titanium and Al polysilicon surface layer is oxidated by aqua regina boil. CONSTITUTION:An electrode window is made to an SiO2 film 22 formed on a surface of a semiconductor substrate 21, and an electrode window, whose laminated structure is constituted of polysilicon films 27, 28, a titanium film 29 and an Al film 30, is formed. At that time, the surface of the polysilicon films 27, 28 are oxidated by aqua regina boil, after the polysilicon films 27, 28. Thereby, oxide films are formed on a surface of each grain made of polysilicon. Precipitation of polysilicon is prevented since the oxide film restricts movement of polysilicon grains. |
