发明名称 TRANSFER CHANNEL FOR MAGNETIC BUBBLE MEMORY
摘要 PURPOSE:To prevent malfunction, by encircling the final end of a soft magnetism thin film transmission channel in an ion injection area, in a connection pattern to be connected to an ion injection tranmission channel from the soft magnetism thin film transmission channel. CONSTITUTION:In a connection part between the soft magnetism thin film transmission channel 10 and the ion injection transmission channel, near the final end 10a of the soft magnetism thin film transmission channel 10, a direct driving force and the parts (parts encircled by a-e) 15 are installed, and in the boundaries (a)-(c) of both ion injection areas the final end 10a of the soft magnetism thin film transmission channel is encircled. By the potential distribution existing in the boundaries (a)-(c), at the nonion injection area side a repulse force to expel a bubble is produced, the bubble cannot jump from the final end 10a to other, transmitted to the ion injection transmission channel 12, and the malfunction is prevented.
申请公布号 JPS61190774(A) 申请公布日期 1986.08.25
申请号 JP19850030162 申请日期 1985.02.20
申请人 FUJITSU LTD 发明人 SATO YOSHIO;OHASHI MAKOTO;MIYASHITA TSUTOMU
分类号 G11C11/14;G11C19/08 主分类号 G11C11/14
代理机构 代理人
主权项
地址