| 摘要 |
PURPOSE:To form a p-n junction, and to obtain a blue LED by a method wherein each surface of p-type and n-type predetermined compound semiconductors having forbidden band width of 2.6eV or more is flattened, brought to a hydrophilic state, dried, bonded directly and joined at 200 deg.C or higher. CONSTITUTION:SiC, ZnSSe and CuAlGa(SSe)2 are used as a p-type compound semiconductor 11 and ZnSSe and GaN as an n-type compound semiconductor 13. The surfaces of both semiconductors are processed to a mirror surface, thinned to 500Angstrom or less, washed by pure water, brought to a hydrophilic state and dried by Freon. When the surfaces of both semiconductors are bonded mutually in a clean atmosphere in the quantity of floating of dust of 20pcs/m<3> or less and treated at 200 deg.C or higher, adhesive strength is increased remarkably, and a p-n junction not lattice-joined is formed. According to the method, the two compound semiconductors having wide forbidden band width are bonded directly, and the p-n junction is shaped, thus mass-producing blue LEDs. |
