| 摘要 |
PURPOSE:To prevent cross talk and to obtain circuit whose operating speed is high by a method wherein a conductive film in an interlayer insulated film of a three-dimensional circuit element, is provided limiting to overlapped part of an upper and a lower layer wiring and a part to designate to be the same electric potential thereto. CONSTITUTION:A lamination-type semiconductor device is constituted mainly of a P-type Si substrate 21, a field oxide film 22, an N-type Si substrate 23, a gate electrode 24, an insulated film 25, a winding 26, an interlayer insulator 27 and a conductive layer 28. An upper and a lower layer 31, 32 works respectively with prescribed function. That is, a wiring 26 in each layer becomes independent of the other wiring 26 and electric current is conducted or is not conducted respectively and selectively. Since the conductive layer 28 with D potential exists in the interlayer insulator in the overlapped region by electric current path of each upper and lower layer wiring 26 etc., signal by capacitive coupling at the overlapped part of the wiring does not leak out or leak in. |
