| 摘要 |
PURPOSE:To write almost at the same speed as that in reading even if a saturation-type memory cell is used by providing the 2nd current source and controlling a reference voltage of a digit line at writing. CONSTITUTION:When transistors QW0 and WW1 for grounding connection are turned off at the time of writing, currents from the 2nd constant current sources I'W0 and I'W1 flow to digit lines D1 and D0 through QY0 and QY1. Thus, reference potentials of the digit lines D0 and D1 are so controlled to be higher than those at reading, and the saturation recovery of a saturation-type of a memory cell is executed quickly; therefore the writing at almost the same speed as that in reading can be executed even if the saturation-type memory cell is used. |
