| 摘要 |
PURPOSE:To enable to perform a simple and uniform heat treatment on compound semiconductor by a method wherein the heating to the compound semiconductors is performed in a liquid substance. CONSTITUTION:A heat treatment is performed on compound semiconductor samples in a substance; which holds its viscosity at the heat treatment temperature for the compound semiconductor samples, and moreover, whose viscosity is held at a temperature negligible the scattering of high-vapor pressure elements from the samples; whereby a uniform heat treatment can be performed on the compound semiconductor samples a simply and effectively. The case of I diagram (a) shows that compound semiconductor samples 7 put in a quartz sample receptacle 6 are dipped in fused B2O3 4 being held at a heat treatment temperature TA in a quartz tank 3 set up in a quartz furnace tube 1 having heaters 2, the atmosphere in the furnace shall be an inactive gas-containing atmosphere 5, and after an elapse of the prescribed time, the compound semiconductor samples 7 are cooled in the B2O3 4, while the case of II diagram (b) shows that quartz tanks 3, wherein fused B2O3 is put, are provided at two places in the furnace, the quartz tanks 3 are respectively constituted of a heat treatment part 3a and a cooling part 3b, samples 7 are dipped in the heat treatment part 3a of a temperature TA, and after an elapse of the prescribed time, the samples 7 are transferred to the cooling part 3b of a temperature Tc and are quenched. Even in this case, the heat treatment is performed while the interior of the furnace is in an inactive gas-containing atmosphere as well. |
