| 摘要 |
PURPOSE:To prevent the generation of a soft-error by separating a memory capacitor from a semiconductor substrate by means of a second isolation insulating film. CONSTITUTION:First isolation insulating films 8 are formed by films such as silicon oxide films, and electrically insulate a plurality of memory capacitors shaped onto a semiconductor substrate 1. Second isolation insulating films 8 are formed by films, such as silicon oxide films, silicon nitride films or the like, and electrically insulate the memory capacitors shaped onto the semiconductor substrate 1 and the semiconductor substrate 1. Accordingly, even when alpha-rays are projected into the semiconductor substrate and electrons are generated in the semiconductor substrate, electrons are obstructed by the second isolation insulating films 8, and do not reach depletion layer regions in the memory capacitors. |
