发明名称 MICROWAVE TREATING APPARATUS
摘要 PURPOSE:To perform microwave treatment of a material to be treated uniformly, accurately and efficiently, by controlling the area of the microwave emitting port of a microwave emitting electrode. CONSTITUTION:A photoresist film 54, which undergoes baking treatment, is formed on a semiconductor wafer 53. A microwave is generated by a microwave generating part 57, which is connected to a feeding waveguide 56. An emitting- port controlling slit 64 for controlling the aperture area of an emitting port 63 is set between auxiliary emitting port plates 65 under an emitting waveguide 59. The slit 64 is driven by a driving motor 66. A total control part 72 controls the following parts based on predetermined treating-condition setting data 73 and temperature data 75 measured by temperature monitors 70 and 71; the output generated by the microwave generating part 57; the slit driving motor 66; and intensity distribution of an emitted microwave 67.
申请公布号 JPS61168921(A) 申请公布日期 1986.07.30
申请号 JP19850009057 申请日期 1985.01.23
申请人 HITACHI LTD;HITACHI TOKYO ELECTRONICS CO LTD 发明人 AMADA HARUO;TANAKA FUKASHI;IKEDA HIROSHI
分类号 H01L21/205;H01L21/302;H01L21/3065 主分类号 H01L21/205
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