| 摘要 |
PURPOSE:To enable to utilize the cleaved surface of a semiconductor as a mirror of a resonator by disposing the resonator of a laser and a photodetector in parallel. CONSTITUTION:Most of light enclosed in an active layer 6 is propagated and emitted to a resonator direction (direction 10), but part is propagated to both sides of the resonator. The propagation to the photodiode is arrived at a photodiode without any failure to generate electron and hole pairs, and a feedback signal of a laser light is generated. The lights of the photodiode and reverse direction are enclosed by a lower clad layer 7, and a GaAs substrate 8 having large refractive index for enclosing the light. Accordingly, most of the light propagated to the vertical direction to the resonator arrives at the photodiode. |
