| 摘要 |
PURPOSE:To obtain an Al film having high reflectivity, purity and reliability by sticking a high melting metal on the surface of a substrate by a vapor phase chemical reaction method and forming the Al film with said metal as a nucleus. CONSTITUTION:The Si substrate 1 subjected to a prescribed treatment is put into a reaction furnace. Particles 11 of W which is the high melting metal are deposited and stuck on to the entire surface to be formed with the Al film by regulating the base pressure to about <=5X10<-5>Torr and by the vapor chemical reaction method using the vapor of tungsten fluoride and gas of hydrogen, etc. Triisobutyl ammonium or the like is introduced into the furnace as an org. Al source and the Al film is grown in the vapor phase with the particles 11 of the W sticking on the surface as the nucleus by the vapor chemical reaction method under the adequate deposition pressure. The Al film having the flat surface shape and high reflectivity is formed by the above-mentioned method.
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