| 摘要 |
PURPOSE:To make the pattern fine and to reduce the junction capacity, by a method in which, using a pattern formed at an emitter region on a first semiconductor film as a mask, the first semiconductor film is etched, a first insulating film on the side of the first semiconductor film and a second semiconductor film over the entire face are formed, doping is done, the resulted semiconductor film is selectively removed,the deposited film of the laminated pattern film outside of the oxidation preventing film is removed, and then a second insulating film is formed on the second semiconductor film using the oxidation preventing film as a mask. CONSTITUTION:After a first semiconductor film 25 is formed on a P-type semiconductor substrate 20, a desired laminated film pattern consisting of an oxidation preventing film 26 and deposited film 27 containing impurities is formed at a region acting as an emitter. After a non-doped polysilicon film 25 is etched using the laminated film pattern as a mask, selective oxidizing is done using the oxidation preventing film 26 as a mask, to form an SiO2 film 28 being a first insulating film. Thereafter, the SiO2 film 28 is etched using the PSG film 27 as a mask to leave the SiO2 film 28 only on the side of the non-doped polysilicon film 25. |
