| 摘要 |
PURPOSE:To control scattering of MISFET electrical characteristics by a method wherein two MISFET using a common gate electrode are piled one upon the other with their source or drain regions so arranged that the lengths of channels cross each other. CONSTITUTION:An n-channel MISFET Qn is mainly constituted of a semiconductor substrate 1, conductive layer 4, insulating film 3 and a pair of semiconductor regions 7. A p-channel MISFET Qp is mainly consituted of a conductive layer 6 wherein a channel is to be formed, conductive layer 4, insulating film 5, and a pair of semiconductor regions 8. The conductive layer 4 is used by the two MISFETs Qn and Qp and serves as their gate electrode, and their source or drain regions are so positioned that their respective channel lengths cross each other. That is, the source or drain regions respectively belonginging to the MISFET Qn and MISFET Qp are provided in different regions and do not overlap, which makes it possible for the semiconductor regions 8 to be formed after the completion of the semiconductor regions 7. |
