| 摘要 |
PURPOSE:To realize high index distribution by forming crystal layers shaping irregularities to a mutually isolated striped shape and forming the crystal layers in ones having a conduction type different from the conduction type of upper and lower crystal layers being in contact with the crystal layers. CONSTITUTION:An N type InP clad layer 92, an InGaAsP active layer 93, a P type InGaAsP guide layer 94 and an N type InGaAsP layer 95 are formed onto an N type InP substrate 91 through a liquid phase epitaxial method in succession, a photo-resist 96 is applied, and a mask is shaped through interference exposure and chemical treatment, and removed to a striped shape until it reaches to the layer 94 through etching treatment. The resist 96 is removed, a P type InGaAsP clad layer 97 and an N type InGaAsP cap layer 98 are shaped through the liquid phase epitaxial method, and electrodes 99, 100 are attached onto upper and lower surfaces. |
