| 摘要 |
PURPOSE:To prevent a dissipation of polycrystalline silicon by ion-implanting silicon into the surface of the polycrystalline silicon in a portion of contact of this silicon with Al so as to make said surface amorphous and to make excessive silicon present therein, and by forming Al electrodes. CONSTITUTION:Silicon is ion-implanted into the surfaces of polycrystalline silicon 30 and 31 in a portion of contact thereof with Al or an Al alloy so as to make said surfaces amorphous and to make surplus silicon present therein. Next, after Al or an Al alloy is formed on the whole surface by a sputtering method, patterning is applied thereto to form an emitter electrode 34 connected with the polycrystalline silicon pattern 30, a base electrode 35 connected with a base region 28, and a wiring 36 connected with the polycrystalline silicon pattern 31 and a diffusion resistance 29 adjacent to this pattern. Since a grain boundary is eliminated nearly at all by said surfaces being made amorphous and since the ion-implanted surplus silicon is present, silicon atoms in the polycrystalline silicon are prevented from diffusing into the metal of the wiring, and thereby the dissipation of the polycrystalline silicon can be prevented. |
