MASK FOR OBTAINING TEXTURED PATTERNS IN RESIST LAYERS USING X-RAY LITHOGRAPHY AND METHOD OF MANUFACTURING THE SAME

摘要

In a mask for X-ray lithography, in which a pattern of a layer corresponding to the structure to be manufactured and consisting of a material opaque to visible light is applied to a thin diaphragm of a material transparent to X-ray radiation, an adjustment with visible radiation, such as laser light, is made possible using a diaphragm consisting of a material opaque to visible light and using adjustment windows of a material transparent to the visible light of the spectrum through the diaphragm.