| 摘要 |
<p>A Schottky power diode includes a semiconductor substrate, an insulating layer disposed on the substrate, a Schottky contact making contact with the substrate through a window formed in the insulating layer, and a semi-insulating layer disposed on the insulating layer and electrically connected to the Schottky contact for receiving a fixed potential at a lateral distance from the Schottky contact.</p> |
