发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To contrive the improvement of electric reliability and a long life by providing an exothermic material for heating a projected electrode at a required temperature at the required position of a semiconductor chip or a wiring substrate in a flip chip type semiconductor device. CONSTITUTION:An exothermic material 11 is provided on the back surface of a semiconductor chip 9 and electrically connected to the electrode 11A of a cap 2 for sealing at the mounting of the semiconductor chip 9 through a conductive and elastic contact 11B. The exothermic material 11 heats a projected electrode 10 at a required temperature through the semiconductor chip 9, appropriately welds the crack generated on the projected electrode 10 for repair recovering to nearly a normal state and the electric reliability of the semiconductor device is improved. The disconnection generated in the projected electrode 10 is also appropriately welded for repair to enable recovering to a nearly normal state, the semiconductor device can be reused and a long life can be contrived.
申请公布号 JPS61148830(A) 申请公布日期 1986.07.07
申请号 JP19840270837 申请日期 1984.12.24
申请人 HITACHI LTD 发明人 NAKAMURA KAZUO
分类号 H01L21/60;H01L23/12 主分类号 H01L21/60
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