| 摘要 |
PURPOSE:To have an electric cell own the capacity of photoelectric storage by dipping a positive electrode consisting of an N type semiconductor coated with conductive high polymers and a negative electrode in electrolytic solution, forming a short circuit outside the electrolytic solution and charging the positive electrode through light radiation. CONSTITUTION:An N-type semiconductor 1a and a negative electrode 2 are connected in a short circuit through an exterior conductive body 3, and external light 5 that has higher energy than the bandgap of the N-type semiconductor 1a is radiated on a positive electrode 1. Then, hall and electrons are generated in the N-type semiconductor 1a, while conductive high polymers 1b of the posi tive electrode 1 come into the state of oxidation, being positively charged. The negative electrode 2 on the other hand is deoxidated by electrons flowing into through the exterior conductive body 3 and negatively charged. Consequent ly, anion in the electrolytic solution moves to the positive electrode 1 while cation moves to the negative electrode 2, both being doped and charging thereby taking place. Accordingly, an electric cell comes to have a photoelectric storage capacity. |
