| 摘要 |
PURPOSE:To increase the crystalline strength of a semiconductor layer and to prevent yield from lowering by introducing nitrogen in the semiconductor layer epitaxially grown. CONSTITUTION:Nitrogen is introduced to a semiconductor layer 2 under an epitaxial growth in a semiconductor integrated circuit device provided with the semiconductor layer 2 epitaxially grown on the upper portion of a main surface of a semiconductor substrate 1. For instance, the semiconductor layer 2 composing mainly a semiconductor element forming portion is epitaxially grown by a thermal decomposition method at about 950-1,050 deg.C by using carrier gas in which activated nitrogen is added to hydrogen or activated nitrogen. That is to say, the semiconductor layer 2 is composed after introducing nitrogen in a roughly homogeneous concentration distribution under an epitaxial growth. As crystalline strength of the semiconductor layer 2 is heightened by introduction of this nitrogen, crystalline deficits are prevented from occurring in various kinds of heat treatments of manufacturing process forming semiconductor element. |
