| 摘要 |
PURPOSE:To readily obtain a semiconductor substrate of low specific resistance by diffusing on both side surfaces of the substrate having high impurity density, and then growing an epitaxial layer on a mirror-polished surface formed on one side. CONSTITUTION:An impurity for imparting the same conductive type is deposited on both side surfaces of a semiconductor substrate 1 to form N type deposited layer on both side surfaces of the substrate 1. The deposited layers 2 are further driven in a diffusion furnace to form diffused regions 3 of higher impurity density than the original substrate density on both side surfaces of the substrate 1. The regions 3 of the substrate 1 are removed by mirror-polishing. An epitaxial layer 5 of the prescribed impurity density is grown on the mirror-polished surface formed on one side of the region 3 of the substrate 1. |
