| 摘要 |
<p>PURPOSE:To constitute an excellent P-N junction, and to enable to make blue light- emission at high luminance by forming a P type conductive layer constituting the P-N junction in a light-receiving element in superlattice structure in which III-V group compound semiconductors and II-VI group compound semiconductors are laminated alternately. CONSTITUTION:Element structure is shaped by an N type GaP crystal substrate 1, an N type layer 2, which is grown on the substrate 1 in an epitaxial manner and to which Al is added as a doner impurity, and a P type conductive layer 3 having superlattice structure. With the P type conductive layer 3 having superlattice structure. With the P type conductive layer 3, non-doped GaP layers 31i as III-V group compound semiconductors and ZnS layers 32i as II-VI group compound semiconductors are laminated alternately and a superlattice is constituted. When a P-N junction is forward-biassed in a light-emitting element having such constitution, electrons are injected, and generate radiative recombination with holes in the GaP layers 31i in the P type conductive layer 3. Light emission in the GaP layer has two peak structure, and luminescent colors are divided into blue in Lz of approximately 15Angstrom and purple in approximately 10Angstrom at a mean wavelength at two peaks. The thickness of the GaP layers is changed, thus displaying light-emitting characteristics having high efficiency extending over purple from green.</p> |
