| 摘要 |
PURPOSE:To divert source-drain regions in a MOSFET for a desired fundamental element or gate electrodes as resistors to a circuit requiring the resistors by connecting the source-drain regions and a proper number of the gate electrodes and constituting a resistance element. CONSTITUTION:One end of a resistor R1 in a fundamental element (a) is connected to a power supply VDD, the other end is connected to a drain region D in a P channel MOSFET(Tp) in a fundamental element (b), and a source region S in the FET(Tp) is connected to a drain region D in an N channel MOSFET(TN). A source region S in the FET(TN) is connected to one end of a resistor R2 in the fundamental element (a), and another end of the source region S is connected to the ground VSS. An input signal line VIN in the fundamental element (b) is connected to gate electrodes G, G for both FETs (Tp), (TN), and an output signal line VOUT is connected to the source region S in one FET(Tp) and the drain region D in the other FET(TN).
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