| 摘要 |
PURPOSE:To reduce the diameter of a bump electrode without deteriorating the characteristics of surge currents by forming an insulating film with a window hole having an area smaller than an ohmic electrode onto the ohmic electrode and shaping the bump electrode onto the insulating film. CONSTITUTION:A P type base region 7 is formed on one main surface side of an N type semiconductor substrate 6, and a window hole 9 is shaped to a first insulating film 8 on the region 7. An ohmic electrode 10 is formed onto a region exposed from the window hole 9. A second insulating film 14 is shaped to the whole surface on the substrate 6, and the film 14 on the electrode 10 is removed partially to form a window hole 17. The window hole 17 is set at a value smaller than the window hole 9 and the electrode 10 by width dw so as to coat the peripheral section of the electrfode 10 with the film 14. A bump electrode 15 is grown onto the electrode 10 exposed from the window hole 17. According to the constitution, a contact area between the electrode 10 and the electrode 15 is reduced slightly, but no trouble is generated because both these electrodes 10 and 15 consist of a metal having small electric resistance and thermal resistance, a semiconductor pellet resists surge currents because a contact area between the electrode 10 and the region 7 does not change, and the size of the pellet can be reduced. |
