| 摘要 |
PURPOSE:To enable the flow velocity measurement with high accuracy to follow the change in flow velocity by the thermoelectric element forming p type thermoelectric semiconductor and n type thermoelectric semiconductor in amorphous extra thin film. CONSTITUTION:A temp. difference is caused on both ends of a thermoelectric element by Peltier effect when a current is flowed to the thermoelectric element. When therefore the fluid is flowed in the arrow mark 9 direction along a substrate 8, this fluid takes the heat caused on the surface of the thin filmed thermoelectric element 1, 2 away, a change is caused on the current of measuring circuit 7 and the speed of the fluid is measured by detecting the change thereof by ammeter 6. The thermoelectric element 1, 2 is formed in amorphous shape and the Seebeck effect is big, so even in the case of faster flow of the fluid or in the transient state of the flow velocity being minutely changed the flow velocity measurement having high accuracy enabling to respond faithfully to these is made possible.
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