| 摘要 |
PURPOSE:To obtain a single crystal suitable for an optical device substrate, etc. and wherein p type impurities are uniformly dispersed by using a GaAs melt added with p type impurities and In when a p type GaAs single crystal is manufactured by a liq. sealant rotary pulling method. CONSTITUTION:Ga, As, p type impurities (e.g., zinc), and In 0.1-1,000 times the number of the added p type impurity units are packed in a cylindrical heat-resistant crucible, etc., and a sealant (e.g., B2O3) is further added. The crucible is then arranged in a high-pressure vessel which is pressurized by an inert gas, then the crucible is heated, and the crystal material melt and the sealant melt are separated into two layers. Subsequently, a crystal-pulling shaft provided above the crucible is lowered, a seed crystal attached to the leasing end of the shaft is brought into contact with the crystal material melt, and then the crystal-pulling shaft is lifted while being rotated to grow an electrically conductive GaAs crystal wherein p type impurities are uniformly dispersed.
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