| 摘要 |
PURPOSE:To enable reduction of the width of a diffusion region by leaving the second polycrystalline silicon only on the side wall of the remaining lamination of an insulation film and the first polycrystalline silicon removing the all surface impurity doped second polycrystalline silicon selectively removing the first and the second insulation films made to adhere by turns. CONSTITUTION:The first insulation film 12, the first polycrystalline silicon 13 introduced with inversely conductive type impurity and the second insulation film 14 are made to adhere by turns on a silicon substrate 11. After a resist 15 is formed on the selected part of the second insulation film 14, the unnecessary parts of the second insulation film 14, the first polycrystalline silicon 13 and the first insulation film 12 are removed by turns using the resist 15 as a mask. The second polycrystalline silicon 16 is made to adhere on all the surface of the silicon substrate 11 where a not removed part remains and the second polycrystalline silicon 16 is removed by the thickness of the film by reactive ion etching. The second polycrystalline silicon 16 remains only on the side wall of the lamination consisting of the insulation films 12, 14 and the first polycrystalline silicon 13 and the width W5 is made nearly equal to the film thickness of the second polycrystalline silicon 16. This enables the reduction of the width of a diffusion region to a submicron level and to prevent the deterioration against voltage and the generation of a leak current. |
