发明名称 ION IMPLANTATION METHOD
摘要 PURPOSE:To improve the wear resistance of the sliding surfaces of a hole and shaft in a method for implanting ions to the inside wall surface of the hole of a work by permitting the ion implantation to the inside wall of the cylindrical work as well. CONSTITUTION:A positive electrode 42 connected by a current conducting member 43 to an ion beam decelerating power source 41 is inserted into the hole of the cylindrical work 50 and a high voltage is loaded to the positive electrode 42 from the ion beam decelerating power source 41. On the other hand, the filament in an ion gun 23 is heated by a heating power source 21 and a gas 20 desired to be implanted to the work 50 is implanted to generate ions. The cations in the generated ions are drawn out by an ion accelerating part 24 and are accelerated by an ion accelerating power source 28 to form an ion beam 29 which is irradiated to the positive electrode 42. The cations are repulsed by the positive electrode 42 applied with the high voltage by which the cations are diffused and are implanted to the inside wall surface of the work 50.
申请公布号 JPS61133377(A) 申请公布日期 1986.06.20
申请号 JP19840254008 申请日期 1984.12.03
申请人 HITACHI LTD 发明人 ISHIMARU KAZUYUKI
分类号 C23C14/48 主分类号 C23C14/48
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