| 摘要 |
PURPOSE:To improve yield by a method wherein a film formed on a first layer resist film rejects waves longer than infrared rays but not waves shorter than infrared rays, a second layer resist film is so pre-backed that the pre-baking does not affect the first layer resist film, and the first layer resist film is pre- baked under its own exclusively specific conditions. CONSTITUTION:A specimen, a wafer 21 for example, provided with a step is covered by an aluminum wiring layer 22. A flattened surface is produced in spite of the step by the application of a first resist film 23 that is 2-3mum thick. Subsequently, the first layer resist film 23 is subjected to pre-baking. A process follows wherein a zirconium carbide film 24 is formed that is a selectively absorbing film that rejects waves longer than infrared rays but allows waves shorter than infrared rays to transmit therethrough. Next, a second layer resist film 25 is formed by application. The second layer resist film 25 is subjected to pre-baking in infrared rays. During the process of prebaking the second layer resist film 25, the first layer resist film 23 is by no means affeced because zirconium carbide fails to let infrared rays through. |
