| 摘要 |
PURPOSE:To improve noise margin by decreasing a low level of an output voltage of the 2nd field effect transistor (TR) being a drive element so as the apply rapid transition between high and low levels thereby increasing the logical amplitude. CONSTITUTION:The 1st field effect TR22 and a resistor 13 are used as a load element and the 2nd field effect TR is used as a drive element. Then as a current flowing to the load element increases, the potential of the gate to the source of the TR22 constituting the load element is lowered and the resistance value of the TR22 is increased. Then the low level of the output voltage of the TR12 being the drive element is low and the transition between high and low levels is made rapid. Thus, the logical amplitude is made large and the noise margin is increased.
|
