| 摘要 |
A method of manufacturing copper wiring in a semiconductor device by forming a diffusion prevention film on a damascene pattern, forming a first copper film by a PVD method, forming a second copper film by a spin-on coating method, and forming a third copper film by a PVD or electrochemical deposition method. The method provides a good coverage characteristic and can prevent generation of voids etc., thus improving reliability of the device.
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