| 摘要 |
PURPOSE:To form the resistor having the I-V characteristic of good linearity by a method wherein the region of contact between polycrystalline and a conductive film is doped with an impurity. CONSTITUTION:An insulation film 2 made of e.g. SiO2 is formed by thermal oxidation or the like, and a polycrystalline Si 5 is formed on the insulation film 2 by etching so as to shape into a prescribed resistor 5. Thereafter, the region 4 in contact with at least the conductive film 3 is doped with an impurity at high concentration. Next, an Al film 3 is formed at the region of contact at least between this film 3 and the polycrystalline film 5 and electrically con nected to the IC formed at the other region. The polycrystalline Si film 5 is doped with an impurity so as to grow into a high resistor, when the first contact region, resistant region 5, and second contact region 4 come into a junction N<+>NN<+> of N<+>N<+>. Thus, the high resistor 5 can be formed by doping the resist ant region 5 with an acceptor impurity into N<+>N<->N<+>. |
