发明名称 PRODUCTION OF SILICON CARBIDE POWDER
摘要 PURPOSE:To produce the fine SiC powder at the comparatively low temp. by heating CaC2 powder and SiO2 powder. CONSTITUTION:After CaC2 powder of 20-200mum particle size and SiO2 powder of <=200mum particle size are mixed so that CaC2/SiO2 molar ratio is regulated to 0.8-3.0 and heated at 900-1,800 deg.C for 1-20 minutes in the inert gas atmosphere, Ca compd. is removed by hydrochloric acid from the mixture and it is heated in air to decarbonate it and furthermore Si and SiO2, etc., are removed by a mixture liquid of hydrofluoric acid and nitric acid and it is washed to obtain high-purity SiC fine powder.
申请公布号 JPS61127615(A) 申请公布日期 1986.06.14
申请号 JP19840246579 申请日期 1984.11.21
申请人 DENKI KAGAKU KOGYO KK 发明人 TSUDA HIDEYUKI;WATANABE SEIICHIRO;YAMASHITA MITSUO
分类号 C01B31/36 主分类号 C01B31/36
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