| 摘要 |
PURPOSE:To improve the yield in LSI manufacture by reducing the number of photolithography processes by a method wherein the processes of exposure and development are introduced by using a mask having a circuit pattern made of a fine pattern incapable of resolution. CONSTITUTION:A film 23 to be etched is etched with the mask of a resist film 24. The resist pattern 24 on this film 23 is left at the part made of a fine pattern 26 incapable of resolution by a micro thickness Ba. Next, the film 23 of the pattern 26 is exposed by wholly removing the surface of the resist film 24 in a micro amount. Further, films 22, 23 to be etched are etched at the same time. Thus, the pattern 25 at the part of a pattern 2 of a reticle 1 patterned in the state of photolithography after development and the part of the pattern 26 patterned by leaving the resist film in a micro amount are prepared at the same time. The enables the process of photolithography to be finished at a time. |
