发明名称 PLASMA CVD APPARATUS
摘要 PURPOSE:To enable high quality and high yield to be obtained by improving the gas utilization factor by a method wherein the raw material gas introduced into a vacuum reaction layer is passed through a cathode made of stainless mesh. CONSTITUTION:The cathode 4 is made of a porous material having fine holes, through which the raw material gas can be passed, such as stainless mesh, and an earth shield 5 of the back of the cathode 4 is provided with an opening 11. A gas exhaust port 9 is formed by installing an exhaust pipe 12 leading out of the bath to this opening 11. The raw material gas introduced into the vacuum reaction bath 1 through a raw material gas supply port 8 is exhausted out of the bath through the cathode 4. This construction allows the raw material gas introduced into the bath to necessarily pass through a plasma decomposition area, much improving the film production speed and increasing the gas utilization factor. Besides, under the condition of a sufficient amount of supplied gas, photoelectric conductivity much increases, and high-quality films can be produced.
申请公布号 JPS61117823(A) 申请公布日期 1986.06.05
申请号 JP19840238609 申请日期 1984.11.14
申请人 TOA NENRYO KOGYO KK 发明人 NAKAMURA OSAMU;MATSUMURA MITSUO;FUKUI KEITARO
分类号 H01L31/04;H01L21/20;H01L21/205 主分类号 H01L31/04
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