| 摘要 |
PURPOSE:To form a multilayer interconnection, in which wire breakdown does not occur, by burying an opening part in a multilayer interconnection structure by a high-melting point metal and flattening the surface. CONSTITUTION:A contact opening part 12 is formed in an insulating film 11 on a semiconductor substrate 10. A tungsten film 13 is applied on the entire surface of the insulating film 11 including the opening part 12 by a gaseous- phase growing method so as to bury the opening part 12. Then the W film 12 is etched by an RIE method and the insulating film 11 is exposed. Then an Al film is deposited on the entire surface, and patterning is performed. An Al wiring 14 is formed, and the first-layer wiring is completed. When the multilayer interconnections of the second layer and higher are formed, an insulating film made of an SiO2 film, phosphorus silicate glass and the like are formed on the Al wiring 14. Thereafter the above described processes are repeated and the multilayer interconnections of the second layer and higher can be formed. |
