发明名称 LIQUID-PHASE EPITAXIAL CRYSTAL GROWTH EQUIPMENT
摘要 PURPOSE:To obtain a liquid-phase epitaxial crystal growth equipment whose constitution and operation is simple by a method wherein suturated melt in a suturated melt storage chamber which is provided to lower stage of a crystal growth chamber is moved to the crystal growth chamber by means of sliding an L-shape slider. CONSTITUTION:An L-shape slider 26 is assembled to a boat main body 21 and Ga suturated melt 8 is flowed into a lower stage chamber 23, and a partition plate 24, which parts an upper stage chamber 22 and a lower stage chamber 23, and an epitaxial crystal growth substrate holder 27, which is set a substrate 9 to be subjected to perform epitaxial crystal growth, are assembled to the boat main body 21. When the L-shape slider 26 is subjected to move in the arrow A direction, the Ga suturated melt 8 in the lower stage chamber 23 is flowed to the upper stage chamber 22 through the aperture 25 at one edge of the partition plate 24. The Ga suturated melt 8 flowed into the upper stage chamber 22 soaks the epitaxial crystal growth substrate 9 through an aperture 28 provided at lattier-state to the base of the substrate holder 27. Thereafter, the epitaxial crystal growth is performed on the substrate 9 if it is cooled gradually.
申请公布号 JPS61111523(A) 申请公布日期 1986.05.29
申请号 JP19840234766 申请日期 1984.11.05
申请人 MITSUBISHI ELECTRIC CORP 发明人 SATO KATSUMI
分类号 H01L21/208;(IPC1-7):H01L21/208 主分类号 H01L21/208
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