Lead materials for semiconductor devices

摘要

A lead material for semiconductor devices comprising from 0.4 to 4.0 wt % of Ni, from 0.1 to 1.0 wt % of Si, from 0.05 to 1.0 wt % of Zn, from 0.01 to 1.0 wt % of Mn, from 0.001 to less than 0.01 wt % of Mg, from 0.001 to less than 0.01 wt % of Cr, up to 0.003 wt % of S, and the balance of Cu and inevitable impurities. The material may further comprise up to 5 ppm of hydrogen and up to 5 ppm of oxygen.