发明名称 METHOD FOR MEASURING THERMAL RESISTANCE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To obtain an extremely reliable measured value without using a specific element by making a high current flow into a diode and then switching the high current to a low current to measure the voltage of the diode before and after the switching. CONSTITUTION:A semiconductor element 1 included in a diode 2 is sealed into an outer case 4. A switch 8 is turned to the contact (a) side, 100mA or more high current is made to flow from a power supply 5 to the diode 2 through a low resistor R, and when the temperature of the semiconductor device is almost stabilized, the voltage between the terminals of the diode 2 is measured by a voltmeter 7. Then, the switch 8 is turned to the (b) side, a constant current of about 1mA is made to flow into the diode 2 through a high resistor R0, and at least within 1msec, the voltage between the terminal is measured. Consequently, a thermal resistance value is calculated from a value obtained by dividing the high current value into several stages and changing the divided values on the basis of a specific formula.
申请公布号 JPS61108978(A) 申请公布日期 1986.05.27
申请号 JP19840230953 申请日期 1984.11.01
申请人 NEC CORP 发明人 KOBAYASHI YASUHISA
分类号 G01R31/26 主分类号 G01R31/26
代理机构 代理人
主权项
地址