MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To reduce a disconnecting rate of the upper wiring at opening portions and to make it possible to form the minute openings, by coating an insulating film after reversed trapezoidal patterns are formed on a substrate. CONSTITUTION:Reversed trapezoidal patterns 4' are formed on a semiconductor substrate 1 having a first wiring layer 3 being formed. Next, an insulating film 5 is coated thereon. At this time the height of the reversed trapezoidal patterns 4' is made higher than the thickness of the insulating film 5. Next, only the reversed patterns 4' are selectively removed to form openings 6 through the insulating film 5. Since the openings 6 has a slope to which the side wall shape of the reversed trapezoidal patterns 4' is transferred, reliability of the electrode wiring 3 formed on the insulating film 2 can be improved.