| 摘要 |
PURPOSE:To enlarge area of a film, to improve productivity of the film and to facilitate mass production of the film by a method wherein germanium compound and an active seed performing chemical interaction therewith are introduced respectively and photo-energy projects thereto, excites germanium compound and makes it react. CONSTITUTION:Polyethylene terephthalate film substrate 103 is placed on a substrate 102 and the side of deposition space 101 is evacuated. Subsequently, GeH4 and/or mixed gases of PH3 gas or B2H6 gas therewith are introduced to the deposition space. Solid Ge powder is filled to the resolution space 102 and is heated by an electric furnace 113, then Ge is molten and GeF4 is blown thereto from a gas cylinder, thus an active seed of GeF2* is generated and introduced to the forming film space 101. While atmosphere pressure in the forming film space 101 is kept at 0.1 Torr 1kw Xe lamp projects directly to the substrate and then non-doped or doping a a-Ge (Si, H, X) film is formed. |
