| 摘要 |
PURPOSE:To enhance photosensitivity characteristics, to increase dark conductivity, and to obtain superior heat resistance and durability by heat treating a photosensitive body having a photoconductive layer made of a-Si:H:F to control the dark conductivity to a specified value. CONSTITUTION:The photoconductive layer made of H2 and F2 produced by decomposing a gas mixture composed of a carrier gas, contg. >=50vol% H2 and SiH2F2 by glow discharge is formed on an aluminum drum substrate or the like, and the obtained photosensitive body is heat treated at 450 deg.C for 30min to the dark conductivity of the photoconductive layer to <=10<-13>Q.cm<-1>. The photoconductive layer thus obtained has high photosensitivity characteristics and a dark conductivity of 10<-13>OMEGAcm and superior heat resistance up to 450 deg.C presumably because a specified combination state between Si, H, and F occurs as film deposition progresses. Thus permitting sufficient durability to be obtained even when the obtained photosensitive body is used under severe conditions as the case of an ultrahigh speed copying photosensitive body or the like. |
