| 摘要 |
PURPOSE:To avoid the disconnection of a metallic wiring by previously attaching a downward extended silica group film onto the side wall of a polycrystalline Si layer according to a predetermined pattern when an insulating film is applied onto a semiconductor substrate, the polycrystalline Si layer is formed onto the insulating film and the metallic wiring is applied extending over he upper section of the insulating film from the upper section of the Si layer through an insulating film. CONSTITUTION:An insulating film 2 is applied onto the surface of a semiconductor substrate 1, a pattern 3 consisting of polycrystalline Si is formed onto the film 2 while being positioned in a prescribed region, an applying liquid 4 mainly comprising an silica group is applied onto the whole surface containing the pattern 3, and organic matter included is scattered while the liquid 4 is cured through heat treatment at a high temperature. A curing film is removed through etching treatment, but the curing film 4 collecting on the side wall of the pattern 3 on the application of the liquid 4 is left as an insulating film extending over a lower section at that time. Consequently, the side wall of the pattern 3 is not made perpendicular but inclined previously, and an insulating film 6 and a metallic wiring 7 are laminated and applied onto the whole surface while including the inclination. Accordingly, disconnections at stepped sections are not generated in the wiring 7. |
