| 摘要 |
PURPOSE:To connect a wiring positively to a semiconductor substrate by slightly etching an insulating layer by a gas before the formation of a wiring layer and previously exposing a foundation in a hole completely when the insulating layer is applied onto the substrate, a contact hole is bored and the wiring layer is shaped extended over the insulating layer. CONSTITUTION:The inside of a vapor-phase growth furnace is purged by N2 at a first step, and heated, and a wafer on which an insulating film with a contact hole is applied is introduced into the furnace. The insides of holes are easy to be re-oxidized by the roll-in of O2 at that time. A vacuum is drawn at second and third steps, and leakage is checked at a succeeding fourth step, but possibility of which the insides of the holes are re-oxidized slightly is also generated at that time. The discharge of a residual gas, a purge by N2, the deposition of a polycrystalline Si layer as a wiring layer, etc. are conducted at fifth-seventh steps, but N2 gas containing HCl gas decompressed to 1Torr or lower is blown in just after the completion of the sixth step for stabilizing a temperature in the furnace, and a previously formed re-oxidized film is removed. |
